CIC Solar Cell Assemblies
Space Solar overview · Satellite Solar Panels · Deployable Solar Arrays
A CIC assembly combines a triple-junction GaAs solar cell, interconnects and coverglass for satellite solar-array integration. The reference configuration below is ES-30TJSC-30, nominal 40 × 80 mm; these values do not apply automatically to other sizes or assemblies.
ES-30TJSC-30 configuration
| Parameter | Reference value |
|---|---|
| Cell technology | Triple-junction GaAs |
| Actual cell dimensions | (80.15 ± 0.1) × (40.15 ± 0.1) mm |
| Cell area | 30.15 cm² |
| Cell thickness | 300 ± 25 μm |
| Mass | 3.7 ± 0.3 g |
| Coverglass | KFB120AR, 120 ± 20 μm |
| Interconnect | Silver-plated Kovar, 6.3 × 8.0 mm, 30 μm |
| Bypass diode | Silicon |
Typical electrical performance
Typical values at AM0, 1 sun, 1353 W/m² and 25°C cell temperature. Final configuration and acceptance requirements must be agreed for the project.
| Parameter | Reference value |
|---|---|
| Open-circuit voltage Voc | 2750 mV |
| Short-circuit current Isc | 520 mA |
| Short-circuit current density Jsc | 17.3 mA/cm² |
| Maximum-power voltage Vmp | 2430 mV |
| Maximum-power current Imp | 503 mA |
| Maximum-power current density Jmp | 16.7 mA/cm² |
| Average conversion efficiency | 30% |
Bypass diode: forward voltage ≤1.0 V at 620 mA; reverse leakage ≤10 μA at 4.0 V.
Radiation performance
1 MeV electron irradiation. Ratios are normalized to beginning-of-life values; typical reference data, not an orbital lifetime claim.
| 1×10¹⁴ e/cm² | 5×10¹⁴ e/cm² | 1×10¹⁵ e/cm² | |
|---|---|---|---|
| Imp / Imp₀ | 0.99 | 0.98 | 0.96 |
| Vmp / Vmp₀ | 0.96 | 0.93 | 0.91 |
| Pmp / Pmp₀ | 0.95 | 0.91 | 0.87 |
Technical review before integration
Confirm array layout, interconnect geometry, coverglass and bypass-diode configuration against the selected model. Cell thickness is not a specification for total packaged assembly thickness.
Datasheets and data clarification
Data clarification: page 4 of the reference Chinese and English PDFs contains conflicting minimum/average current labels for 500 mA and 490 mA at VL = 2350 mV. These two figures are excluded from the published selection table pending technical confirmation. The original 4080 sheet also uses inconsistent middle-junction material notation; no unresolved layer designation is asserted here.